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| Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm q q q q 16.20.5 12.5 3.5 Solder Dip Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 100 100 5 8 5 60 3 150 -55 to +155 Unit V V V A A W C C 0.7 s Features 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 100V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 3A VCE = 5V, IC = 3A IC = 3A, IB = 0.3A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 90 20 60 20 1.8 2 V V MHz pF 200 min typ max 50 50 Unit A A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 P 100 to 200 Rank hFE2 1 Power Transistors PC -- Ta 80 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.0W) TC=25C 7 2SD1485 IC -- VCE 8 VCE=5V 25C IC -- VBE Collector power dissipation PC (W) 70 60 50 40 30 20 (2) 10 0 0 20 40 (3) (1) Collector current IC (A) Collector current IC (A) 8 IB=100mA 6 80mA 60mA 4 40mA 2 20mA 10mA 0 6 5 4 3 2 1 0 TC=100C -25C 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 TC=100C 0.1 0.03 0.01 0.01 0.03 -25C 25C 10000 hFE -- IC 1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=5V f=1MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100C 25C -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 10 ICP 3 1 DC 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 IC 10ms t=1ms Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 (1) 10 (2) 1 10-1 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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